Pyroelectric dependence of atomic layer-deposited Hf0.5Zr0.5O2 on film thickness and annealing temperature
Author:
Affiliation:
1. Nanoelectronic Materials Laboratory (NaMLab) gGmbH, 01187 Dresden, Germany
2. Chair of Nanoelectronic Materials, TU Dresden, 01187 Dresden, Germany
Funder
Deutsche Forschungsgemeinschaft
European Union Horizon 2020
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0062789
Reference34 articles.
1. Recent progress in infrared detector technologies
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