Recent Progress on Energy-Related Applications of HfO2-Based Ferroelectric and Antiferroelectric Materials-Reference-Cited by-同舟云学术

Recent Progress on Energy-Related Applications of HfO2-Based Ferroelectric and Antiferroelectric Materials

Published:2020-07-23 Issue:8 Volume:2 Page:2301-2317
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ali Faizan¹²,Zhou Dayu¹^ORCID,Ali Mohsin¹,Ali Hafiz Waqas¹,Daaim Muhammad¹,Khan Sheeraz¹,Hussain Muhammad Muzammal¹,Sun Nana¹

Affiliation:

1. Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China

2. Institute of Science and Technology, Sanya University, Sanya 572022, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00304

Reference155 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Advanced memory—Materials for a new era of information technology

3. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

4. Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

5. Pyroelectricity of silicon-doped hafnium oxide thin films

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