Pyroelectricity of silicon-doped hafnium oxide thin films-Reference-Cited by-同舟云学术

Pyroelectricity of silicon-doped hafnium oxide thin films

Published:2018-04-02 Issue:14 Volume:112 Page:142901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jachalke Sven¹^ORCID,Schenk Tony²^ORCID,Park Min Hyuk²^ORCID,Schroeder Uwe²^ORCID,Mikolajick Thomas²³^ORCID,Stöcker Hartmut¹^ORCID,Mehner Erik¹,Meyer Dirk C.¹

Affiliation:

1. Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg, Germany

2. NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden, Germany

3. Institute for Semiconductors and Microsystems, TU Dresden, Nöthnitzer Str. 64, 01187 Dresden, Germany

Funder

Deutsche Forschungsgemeinschaft

Alexander von Humboldt-Stiftung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5023390

Reference51 articles.

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4. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

5. T. Schenk , M. Hoffmann , C. Richter , M. Pešić , S. Mueller , S. Slesazeck , U. Schroeder , T. Mikolajick , D. Pohl , J. Mueller , P. Polakowski , R. Materlik , A. Kersch , X. Sang , E. D. Grimley , and J. M. LeBeau , inMRS Fall Meeting, Boston, MA (2015), pp. 1–47.

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