High Quality Factors in Superlattice Ferroelectric Hf0.5Zr0.5O2 Nanoelectromechanical Resonators-Reference-Cited by-同舟云学术

High Quality Factors in Superlattice Ferroelectric Hf_0.5Zr_0.5O₂ Nanoelectromechanical Resonators

Published:2022-08-03 Issue:32 Volume:14 Page:36807-36814
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zheng Xu-Qian¹^ORCID,Tharpe Troy¹,Enamul Hoque Yousuf S M¹^ORCID,Rudawski Nicholas G.²,Feng Philip X.-L.¹^ORCID,Tabrizian Roozbeh¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States

2. Research Service Centers, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States

Funder

Defense Advanced Research Projects Agency

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c08414

Reference35 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Pyroelectric dependence of atomic layer-deposited Hf0.5Zr0.5O2 on film thickness and annealing temperature

3. Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

4. Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

5. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

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