Ge 3d core-level shifts at (100)Ge∕Ge(Hf)O2 interfaces: A first-principles investigation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2833696
Reference20 articles.
1. Electrical Performance of Ge Devices
2. Growth mechanism difference of sputtered HfO2 on Ge and on Si
3. Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics
4. HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
5. Interface traps and dangling-bond defects in (100)Ge∕HfO2
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