Electrical Performance of Ge Devices
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Publisher
Elsevier
Reference64 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. High-κ Gate Dielectrics,2004
3. Hydrogen-assisted pulsed-laser deposition of (001)CeO2 on (001) Ge
4. IEDM Technical Digest IEEE;Chui,2002
5. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy
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2. Changes on Forward Recovery among Si, Ge and SiC-Based PiN Diode;2022 International Conference on Innovations in Science, Engineering and Technology (ICISET);2022-02-26
3. Comparative Performance Evaluation of Si and Ge Solar Cell Using PC1D Modelling;Lecture Notes in Mechanical Engineering;2021
4. In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams;The Journal of Chemical Physics;2014-11-07
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