A Study on DC Characteristics of Si-, Ge- and SiC-Based MOSFETs-Reference-Cited by-同舟云学术

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A Study on DC Characteristics of Si-, Ge- and SiC-Based MOSFETs

Published:2023 Issue: Volume: Page:335-348
ISSN:1876-1100
Container-title:The Fourth Industrial Revolution and Beyond
language:
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Author:

Al Masum Kazi Mahamud,Shohag Tanvir Yousuf,Ullah Md. Shahid

Publisher

Springer Nature Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-19-8032-9_24

Reference21 articles.

1. She, X., Huang, A.Q., Lucia, O., Ozpineci, B.: Review of silicon carbide power devices and their applications. IEEE Trans. Ind. Electron. 64, 8193–8205 (2017). https://doi.org/10.1109/TIE.2017.2652401

2. Millan, J., Godignon, P., Perpina, X., et al.: A survey of wide bandgap power semiconductor devices. IEEE Trans. Power Electron. 29, 2155–2163 (2014). https://doi.org/10.1109/TPEL.2013.2268900

3. Houssa, M., Satta, A., Simoen, E., et al.: In: Electrical Performance of Ge Devices. Elsevier Ltd (2007)

4. Neamen, D.A.: In: Semiconductor Physics and Devices: Basics Applications (2012)

5. Wang, J.: A comparison between Si and SiC-MOSFETs. IOP Conf Ser Mater Sci Eng 729 (2020).https://doi.org/10.1088/1757-899X/729/1/012005

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1. Design and Analysis of FinFET models based Ternary Half Subtractor;2024 3rd International Conference for Innovation in Technology (INOCON);2024-03-01

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