Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1613031
Reference11 articles.
1. Electron and hole mobility enhancement in strained SOI by wafer bonding
2. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate
3. High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric
4. Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources
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