HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1854195
Reference16 articles.
1. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
2. Electrical characterization of germanium p-channel MOSFETs
3. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate
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