Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying-Reference-Cited by-同舟云学术

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Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying

Published:2021-12-16 Issue: Volume: Page:
ISSN:2694-2461
Container-title:ACS Materials Au
language:en
Short-container-title:ACS Mater. Au

Author:

Kuzmin Mikhail¹²^ORCID,Lehtiö Juha-Pekka¹,Rad Zahra Jahanshah¹,Sorokina Svetlana V.²,Punkkinen Marko P. J.¹,Hedman Hannu-Pekka³,Punkkinen Risto³,Laukkanen Pekka¹^ORCID,Kokko Kalevi¹

Affiliation:

1. Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland

2. Ioffe Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation

3. Department of Information Technology, University of Turku, FI-20014 Turku, Finland

Funder

Academy of Finland

Business Finland

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsmaterialsau.1c00039

Reference46 articles.

1. The Transistor, A Semi-Conductor Triode

2. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

3. High-k/Ge MOSFETs for future nanoelectronics

4. A vertical silicon-graphene-germanium transistor

5. Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical investigation of octahedral tilting and bandgap non‐linearity in monolayer Ruddlesden‐Popper A ₂ Pb _1‐x Ge _x I ₄ perovskites ;International Journal of Energy Research;2022-08-14

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