Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics-Reference-Cited by-同舟云学术

Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics

Published:2015-02-14 Issue:12 Volume:25 Page:1805-1813
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zheng Xiaohu¹,Zhang Miao¹,Shi Xiaohua¹,Wang Gang¹²,Zheng Li¹,Yu Yuehui¹,Huang Anping³,Chu Paul K.⁴,Gao Heng⁵,Ren Wei⁵,Di Zengfeng¹,Wang Xi¹

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics; Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences; 865 Changning Road Shanghai 200050 China

2. School of Physical Science and Technology; Lanzhou University; Lanzhou 730000 China

3. Department of Physics; Beihang University; Beijing 100191 China

4. Department of Physics and Materials Science; City University of Hong Kong; Tat Chee Avenue; Kowloon Hong Kong China

5. International Centre for Quantum and Molecular Structures and Department of Physics; Shanghai University; Shanghai 200444 China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201404031/fullpdf

Reference54 articles.

1. High-k/Ge MOSFETs for future nanoelectronics

2. Challenges and opportunities in advanced Ge pMOSFETs

3. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

4. Academic and industry research progress in germanium nanodevices

5. Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors

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