Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1829801
Reference15 articles.
1. Origin of hexagonal-shaped etch pits formed in (0001) GaN films
2. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
3. Structural changes during annealing of GaInAsN
4. Nearest-Neighbor Configuration in (GaIn)(NAs) Probed by X-Ray Absorption Spectroscopy
5. Theory of electronic structure evolution in GaAsN and GaPN alloys
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3. The blueshift of the band gap energy caused by In–N clusters in In Ga1−N As1− alloys depending on the N content;Superlattices and Microstructures;2015-09
4. The origin for the formation of Al–N clusters in the Ga-rich dilute nitride Al x Ga 1 − x N y X 1 − y (X = As, or P) alloys;Superlattices and Microstructures;2014-11
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