The blueshift of the band gap energy caused by In–N clusters in In Ga1−N As1− alloys depending on the N content
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys
3. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
4. Spatial Correlations in GaInAsN Alloys and their Effects on Band-Gap Enhancement and Electron Localization
5. Structural changes during annealing of GaInAsN
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of In-N Clusters on Band Gap Energy of Dilute Nitride In x Ga 1− x N y As 1− y;Communications in Theoretical Physics;2016-05-01
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