Influence of In-N Clusters on Band Gap Energy of Dilute Nitride In x Ga 1− x N y As 1− y
Author:
Publisher
IOP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://iopscience.iop.org/article/10.1088/0253-6102/65/5/635/pdf
Reference20 articles.
1. Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys
2. The origin for the formation of Al–N clusters in the Ga-rich dilute nitride Al x Ga 1 − x N y X 1 − y (X = As, or P) alloys
3. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
4. Spatial Correlations in GaInAsN Alloys and their Effects on Band-Gap Enhancement and Electron Localization
5. The blueshift of the band gap energy caused by In–N clusters in In Ga1−N As1− alloys depending on the N content
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1. The Composition Dependence of the Band Gap Energy for the O-Rich ZnSexO1−x;Journal of Electronic Materials;2018-04-03
2. The activation energy for Mg acceptor in the Ga-rich InGaN alloys;Superlattices and Microstructures;2017-02
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