The origin for the formation of Al–N clusters in the Ga-rich dilute nitride Al x Ga 1 − x N y X 1 − y (X = As, or P) alloys-Reference-Cited by-同舟云学术

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The origin for the formation of Al–N clusters in the Ga-rich dilute nitride Al x Ga 1 − x N y X 1 − y (X = As, or P) alloys

Published:2014-11 Issue: Volume:75 Page:409-415
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhao Chuan-zhen,Wei Tong,Li Na-Na,Wang Sha-Sha,Lu Ke-Qing

Funder

Science and Technology Plans of Tianjin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Nearest-Neighbor Configuration in (GaIn)(NAs) Probed by X-Ray Absorption Spectroscopy

2. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

3. A model for thermal annealing on forming In—N clusters in InGaNP

4. Band-gap energy ofInxGa1−xNyAs1−yas a function of N content

5. ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic Properties of AlxGa1-xNyAs1-y Quaternary Semiconducting Alloys Lattice Matched to GaAs;Acta Physica Polonica A;2020-04

2. Influence of In-N Clusters on Band Gap Energy of Dilute Nitride In x Ga 1− x N y As 1− y;Communications in Theoretical Physics;2016-05-01

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