Direct investigation of (sub-) surface preparation artifacts in GaAs based materials by FIB sectioning-Reference-Cited by-同舟云学术

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Direct investigation of (sub-) surface preparation artifacts in GaAs based materials by FIB sectioning

Published:2016-04 Issue: Volume:163 Page:19-30
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Belz Jürgen,Beyer Andreas,Torunski Torsten,Stolz Wolfgang,Volz Kerstin

Funder

German Science Foundation

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference60 articles.

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2. Quantitative composition determination at the atomic level using model-based high-angle annular dark field scanning transmission electron microscopy;Martinez;Ultramicroscopy,2014

3. High-resolution Z-contrast imaging of crystals;Pennycook;Ultramicroscopy,1991

4. Radiation damage in ion-milled specimens: characteristics, effects and methods of damage limitation;Barber;Ultramicroscopy,1993

5. TEM sample preparation by ion milling/amorphization;Barna;Micron,1999

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