Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM-Reference-Cited by-同舟云学术

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Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM

Published:2019-10 Issue: Volume:524 Page:125180
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kükelhan P.,Firoozabadi S.,Beyer A.,Duschek L.,Fuchs C.,Oelerich J.O.,Stolz W.,Volz K.

Funder

German Research Foundation (DFG)

European Union’s Horizon 2020

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference54 articles.

1. Enabling optical communication;Murphy;Nat. Photon.,2010

2. Type-II quantum-well lasers for the mid-wavelength infrared;Meyer;Appl. Phys. Lett.,1995

3. Low-Lattice-strain long-wavelength GaAsSb/GaInAs type-II quantum wells grown on GaAs substrates;Kudo;Jpn. J. Appl. Phys.,2002

4. Novel type-II material system for laser applications in the near-infrared regime;Berger;AIP Adv.,2015

5. MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications;Fuchs;J. Cryst. Growth,2017

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1. InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property;Materials Science in Semiconductor Processing;2024-09

2. Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages;Applied Surface Science;2024-01

3. Chemical Characterization for III-V Semiconductor Heterostructures Investigated by Aberration-Corrected STEM;Microscopy and Microanalysis;2023-07-22

4. Systematic strain-induced bandgap tuning in binary III–V semiconductors from density functional theory;Physica Scripta;2023-05-23

5. Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers;Nanomaterials;2023-02-22

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