Role of oxygen vacancies in HfO2-based gate stack breakdown
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3416912
Reference24 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. High dielectric constant gate oxides for metal oxide Si transistors
3. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
4. Stability and band offsets of nitrogenated high-dielectric-constant gate oxides
5. Dielectric breakdown mechanisms in gate oxides
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