Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy-Reference-Cited by-同舟云学术

Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

Published:2024-08-26 Issue: Volume: Page:
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Shen Yaqing,Zhu Kaichen^ORCID,Xiao Yiping,Waldhör Dominic^ORCID,Basher Abdulrahman H.,Knobloch Theresia^ORCID,Pazos Sebastian^ORCID,Liang Xianhu,Zheng Wenwen,Yuan Yue^ORCID,Roldan Juan B.,Schwingenschlögl Udo^ORCID,Tian He^ORCID,Wu Huaqiang^ORCID,Schranghamer Thomas F.^ORCID,Trainor Nicholas,Redwing Joan M.^ORCID,Das Saptarshi^ORCID,Grasser Tibor^ORCID,Lanza Mario^ORCID

Publisher

Springer Science and Business Media LLC

Link

https://www.nature.com/articles/s41928-024-01233-w.pdf

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