Stability and band offsets of nitrogenated high-dielectric-constant gate oxides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1638896
Reference24 articles.
1. Scaling the gate dielectric: Materials, integration, and reliability
2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
3. High-κ gate dielectrics: Current status and materials properties considerations
4. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
5. Chemical and physical limits on the performance of metal silicate high-k gate dielectrics
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