Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric-Reference-Cited by-同舟云学术

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Published:2023-07-10 Issue:7 Volume:5 Page:3908-3916
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Xiao Hongshan¹,Liu Yifan¹,Ding Sujuan²,Gao Yunfei¹,Zhai Minglong¹,Liang Xuelei¹^ORCID,Jin Chuanhong²^ORCID,Liu Honggang¹,Zhang Zhiyong¹^ORCID

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China

2. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00613

Reference46 articles.

1. Room-temperature transistor based on a single carbon nanotube

2. Ballistic carbon nanotube field-effect transistors

3. Carbon Nanotubes as Schottky Barrier Transistors

4. Doping-Free Fabrication of Carbon Nanotube Based Ballistic CMOS Devices and Circuits

5. Improving subthreshold swing to thermionic emission limit in carbon nanotube network film-based field-effect

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