Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122011
Reference31 articles.
1. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
2. Monte Carlo calculation of the velocity‐field relationship for gallium nitride
3. Theoretical study of electron transport in gallium nitride
4. Electron mobilities in gallium, indium, and aluminum nitrides
5. Comparison of high field electron transport in GaN and GaAs
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