Characteristics of High-Al-Composed Quantum Structure Under Strain Effects
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Mathematics,General Earth and Planetary Sciences,General Agricultural and Biological Sciences,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s40995-020-01022-y.pdf
Reference17 articles.
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2. Bernardini F, Fiorentini V, Vanderbilt D (1997) Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys Rev B-Condens Matter Mater Phys 56(16):R10024–R10027. https://doi.org/10.1103/PhysRevB.56.R10024
3. Bykhovski AD, Kaminski VV, Shur MS, Chen QC, Khan MA (1996) Piezoresistive effect in wurtzite N-Type GaN. Appl Phys Lett 68:818. https://doi.org/10.1063/1.116543
4. Carnez B, Cappy A, Kaszynski A, Constant E, Salmer G (1980) Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics. J Appl Phys 51(1):784–790. https://doi.org/10.1063/1.327292
5. Della Sala F, Di Carlo A, Lugli P, Bernardini F, Fiorentini V, Scholz R, Jancu JM (1999) Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures. Appl Phys Lett 74(14):2002–2004. https://doi.org/10.1063/1.123727
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