A unified static-dynamic analytic model for ultra-scaled III-nitride high electron mobility transistors
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, New York University, Brooklyn, New York 11201, USA
Funder
Boeing
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5064385
Reference55 articles.
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