N<sub>2</sub>O plasma treatment effect on reliability of p-GaN gate AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

N₂O plasma treatment effect on reliability of p-GaN gate AlGaN/GaN HEMTs

Published:2022-03-28 Issue:13 Volume:120 Page:132103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Jun Hyuk¹^ORCID,Hwang Sun-Kyu¹^ORCID,Kim Joonyong¹,Jeon Woochul¹^ORCID,Hwang Injun¹^ORCID,Oh Jaejoon¹,Kim Boram¹,Park Younghwan¹,Shin Dong-Chul¹,Park Jong-Bong¹,Kim Jongseob¹^ORCID

Affiliation:

1. Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 16678, Suwon, Republic of Korea

Abstract

This work investigates the effect of N2O plasma treatment on the reliability of p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs), specifically in the AlGaN drift region. The formation of a GaON/AlON compound layer on the AlGaN surface after N2O plasma treatment was confirmed by energy-dispersive x-ray spectroscopy mapping and x-ray photoelectron spectroscopy analysis. When a device is under highly stressed conditions, the compound layer reduces the number of negatively charged interface traps and protects the AlGaN surface by hindering the Ga-out diffusion. The high temperature reverse bias reliability test demonstrated that the N2O plasma treatment enhanced the reliability of p-GaN gate HEMTs by suppressing the degradation of the on-resistance from 18.7% to 9.0%, after being subjected to a high drain bias (VDS = 700 V) at 200 °C for 1000 s.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0082165

Reference30 articles.

1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2. Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors

3. GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

4. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

5. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices;Applied Physics Letters;2024-08-12

2. p‐GaN Selective Nitridation to Obtain a Normally Off p‐GaN Gate AlGaN/GaN High‐Electron‐Mobility Transistors;physica status solidi (RRL) – Rapid Research Letters;2023-12-03

3. Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH₃ Plasma Pretreatment;IEEE Transactions on Electron Devices;2023-09