N<sub>2</sub>O plasma treatment effect on reliability of p-GaN gate AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

N₂O plasma treatment effect on reliability of p-GaN gate AlGaN/GaN HEMTs

Published:2022-03-28 Issue:13 Volume:120 Page:132103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Jun Hyuk¹^ORCID,Hwang Sun-Kyu¹^ORCID,Kim Joonyong¹,Jeon Woochul¹^ORCID,Hwang Injun¹^ORCID,Oh Jaejoon¹,Kim Boram¹,Park Younghwan¹,Shin Dong-Chul¹,Park Jong-Bong¹,Kim Jongseob¹^ORCID

Affiliation:

1. Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 16678, Suwon, Republic of Korea

Abstract

This work investigates the effect of N2O plasma treatment on the reliability of p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs), specifically in the AlGaN drift region. The formation of a GaON/AlON compound layer on the AlGaN surface after N2O plasma treatment was confirmed by energy-dispersive x-ray spectroscopy mapping and x-ray photoelectron spectroscopy analysis. When a device is under highly stressed conditions, the compound layer reduces the number of negatively charged interface traps and protects the AlGaN surface by hindering the Ga-out diffusion. The high temperature reverse bias reliability test demonstrated that the N2O plasma treatment enhanced the reliability of p-GaN gate HEMTs by suppressing the degradation of the on-resistance from 18.7% to 9.0%, after being subjected to a high drain bias (VDS = 700 V) at 200 °C for 1000 s.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0082165

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