GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments-Reference-Cited by-同舟云学术

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GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

Published:2010-06-01 Issue:2 Volume:2 Page:89-95
ISSN:1941-4900
Container-title:Nanoscience and Nanotechnology Letters
language:en
Short-container-title:Nanosci Nanotechnol Lett

Author:

Son Kyung-ah,Liao Anna,Lung Gerald,Gallegos Manuel,Hatake Toshiro,Harris Richard D.,Scheick Leif Z.,Smythe William D.

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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