Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Published:2015-08-24 Issue:8 Volume:107 Page:083504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Greenlee Jordan D.¹^ORCID,Specht Petra²,Anderson Travis J.¹,Koehler Andrew D.¹,Weaver Bradley D.¹,Luysberg Martina³,Dubon Oscar D.²,Kub Francis J.¹,Weatherford Todd R.⁴,Hobart Karl D.¹

Affiliation:

1. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA

2. University of California at Berkeley, Berkeley, California 94720, USA

3. ERC, Research Center Juelich GmbH, 52425 Juelich, Germany

4. Naval Postgraduate School, Monterey, California 93943, USA

Funder

Defense Threat Reduction Agency (DTRA)

U.S. Department of Energy (Department of Energy)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4929583

Reference18 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

3. Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

4. Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

5. dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

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