Effects of radiation damage on GaN epitaxial layer arising from argon ion implantation for edge termination-Reference-Cited by-同舟云学术

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Effects of radiation damage on GaN epitaxial layer arising from argon ion implantation for edge termination

Published:2024-05 Issue: Volume:550 Page:165301
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Chen Meng-Yu,Chao Der-Sheng^ORCID,Liang Jenq-Horng

Funder

National Science and Technology Council

Publisher

Elsevier BV

Reference51 articles.

1. Gallium nitride vertical power devices on foreign substrates: A review and outlook;Zhang;J. Phys. D Appl. Phys.,2018

2. A review of gallium nitride power device and its applications in motor drive;Ding;CES Trans. Electric. Mach. Syst.,2019

3. Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers;Johnson;IEEE Trans. Electron Devices,2002

4. Design of ion-implanted junction termination extension for vertical GaN pin rectifiers;Cho;ECS Trans.,2020

5. Ion-implanted edge termination for GaN Schottky diode rectifiers;Mohammad;J. Vac. Sci. Technol. B,2006

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