Si1−yCy/Si(001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119819
Reference7 articles.
1. Spatially indirect radiative recombination of carriers localized in Si1−x−yGexCy/Si1−yCy double quantum well structure on Si substrates
2. Near-Band-Edge Photoluminescence from PseudomorphicSi1−yCy/SiQuantum Well Structures
3. Photoluminescence of a Pseudomorphic Si1−yCy/Si MQW Structure under Pressure
4. Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCyon Si(001)
5. Precipitation and relaxation in strained Si1−yCy/Si heterostructures
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1. Structural and vibrational properties of carbon impurities in crystalline silicon;Semiconductor Science and Technology;2001-03-27
2. CVD grown silicon thin films with high carbon concentration: morphology and self-assembly controlled by surface segregation;Journal of Crystal Growth;2001-01
3. Interaction of acetylene on Si(111): Growth and luminescence study of Si1−xCx thin layers;Philosophical Magazine B;2000-04
4. Growth temperature dependence of substitutional carbon incorporation in Si1−yCy alloys and Si1−yCy/Si multiple quantum wells;Journal of Crystal Growth;2000-02
5. Si1−xCx formation by reaction of Si(111) with acetylene: growth mode, electronic structure and luminescence investigation;Surface Science;1999-05
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