Growth temperature dependence of substitutional carbon incorporation in Si1−yCy alloys and Si1−yCy/Si multiple quantum wells-Reference-Cited by-同舟云学术

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Growth temperature dependence of substitutional carbon incorporation in Si1−yCy alloys and Si1−yCy/Si multiple quantum wells

Published:2000-02 Issue:4 Volume:209 Page:789-794
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jeong M.S,Ihm S.H,Seok J.H,Cha O.H,Kim J.Y,Suh E.-K,Lee H.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. S.C. Jain, H.J. Osten, B. Dietrich, H. Rucker, Semicond. Sci. Technol. 10 (1995) 1289 and references therein.

2. Epitaxial growth of Si1−x−yGexCy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane

3. Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCyon Si(001)

4. Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition

5. Carbon incorporation in Si1−yCy alloys grown by molecular beam epitaxy using a single silicon–graphite source

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxy of carbon-rich silicon with MBE;Materials Science and Engineering: B;2002-02

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