Author:
Lavéant P,Gerth G,Werner P,Gösele U
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion
2. The contribution of vacancies to carbon out-diffusion in silicon
3. L.D. Lanzerotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, C. Magee, Proc. Int. Device Meeting, Piscataway, 1996, p. 249.
4. H.J. Osten, Carbon-Containing Layers on Silicon, Transtech Publ., Zurich, 1999.
5. Si/Si1−xGex and Si/Si1−yCy heterostructures: materials for high-speed field-effect transistors
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