Si1-xCx/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current

Abstract

Vertical Schottky diodes have been fabricated on low C content Si1-xCxand 3C-SiC epilayers epitaxially grown on Si(001) substrates. Significant leakage current was observed in 3C-SiC diodes under reverse bias, masking any rectifying behavior. This issue is far less pronounced in Si1-xCxbased Schottky diodes which demonstrate a clear critical breakdown. Leakage current is shown to be greater in relaxed Si1-xCxlayers. While crystalline Si1-xCxis not currently a viable material for high power electronics it is useful for assessing the impact lattice mismatch and crystalline quality has on the behavior of rectifiers.