Lattice parameter in Si1−yCy epilayers: Deviation from Vegard’s rule
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121127
Reference12 articles.
1. Near-Band-Edge Photoluminescence from PseudomorphicSi1−yCy/SiQuantum Well Structures
2. Band Alignment inSi1−yCy/Si(001)andSi1−xGex/Si1−yCy/Si(001)Quantum Wells by Photoluminescence under Applied [100] and [110] Uniaxial Stress
3. Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCyon Si(001)
4. Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si1 − − Ge C alloys on Si
5. Lattice Parameter and Density in Germanium-Silicon Alloys1
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