Photoluminescence of a Pseudomorphic Si1−yCy/Si MQW Structure under Pressure
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. The growth and characterization of Si1−yCy alloys on Si(001) substrate
2. Synthesis of Si1−yCyalloys by molecular beam epitaxy
3. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
4. Band‐edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCyalloys
5. Optical band gap of the ternary semiconductor Si1−x−yGexCy
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature Dependence of the Energy Gap of Semiconductors in the Low-Temperature Limit;Physical Review Letters;2004-05-14
2. High-Pressure Photoluminescence Studies of Pseudomorphic Si1-yCy/Si MQW Structures;physica status solidi (b);2000-05
3. High pressure photoluminescence studies of carbon-induced germanium quantum dots grown on Si;Semiconductor Science and Technology;2000-02-01
4. Luminescence from Si-Si1−xGex/Si1−yCy-Si structures;Journal of Luminescence;1998-12
5. Optimization of growth conditions for strained Si/Si1−yCy structures;Thin Solid Films;1998-05
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