Synthesis of Si1−yCyalloys by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106655
Reference15 articles.
1. Heterojunction bipolar transistors using Si-Ge alloys
2. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
3. Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
4. Resonant tunneling in Si/Si1−xGexdouble‐barrier structures
5. GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm
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2. Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy;Journal of Crystal Growth;2013-01
3. The effect of structural and chemical bonding changes on the optical properties of Si/Si1−xCx core/shell nanowires;Journal of Materials Chemistry C;2013
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