Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106774
Reference14 articles.
1. Physics and applications of GexSi1-x/Si strained-layer heterostructures
2. Silicon/germanium strained layer superlattices
3. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
4. Integrated Rib Waveguide-Photodetector Using Si/Si1−xGex Multiple Quantum Wells for Long Wavelenghts
5. Si/SiGe modulation doped field-effect transistor with two electron channels
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