Author:
Kesan V. P.,May P. G.,Treyz G. V.,Bassous E.,Iyer S. S.,Halbout J. -M.
Abstract
ABSTRACTWe have investigated the structural, electrical, and optical quality of epitaxial Si and Si1−xGex films grown by MBE on SIMOX (Separation by IMplanted OXygen) silicon substrates. Epitaxial films grown on these SOI substrates have been characterized using planar and cross-sectional TEM, high resolution X-ray diffraction, SIMS, and Seeco chemical etching to delineate defects. We have fabricated Si/SiGe P-i-N photodetectors integrated with Si waveguides on SOI for long wavelength applications. Low reverse leakage current densities were seen in these device structures. The photodetector exhibited an internal quantum efficiency of 50% at 1.1 μm with a frequency response bandwidth of 2 GHz.
Publisher
Springer Science and Business Media LLC
Cited by
5 articles.
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