Structural and vibrational properties of carbon impurities in crystalline silicon-Reference-Cited by-同舟云学术

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Structural and vibrational properties of carbon impurities in crystalline silicon

Published:2001-03-27 Issue:5 Volume:16 Page:R41-R49
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhu Xiao Yan,Lee Seung Mi,Kim Jae Yon,Lee Young Hee,Chung Dong-Chul,Frauenheim Thomas

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Carbon-containing group IV heterostructures on Si: properties and device applications

2. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system

3. Raman spectroscopy of CySi1−yalloys grown by molecular beam epitaxy

4. The Raman Spectrum of Carbon in Silicon

5. Precipitation and relaxation in strained Si1−yCy/Si heterostructures

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2. Point Defects in Semiconductors;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07

3. The bonding configuration in a partially relaxed pseudomorphic epilayer of SiGe: evidence of the BC-8 phase of silicon;Journal of Physics: Condensed Matter;2008-07-31

4. SiH2adsorption on the single dimer vacancy of the Si(100) surface;Journal of Physics: Condensed Matter;2006-07-14

5. Quantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and Carbon;Solid State Phenomena;2005-12

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