Precipitation and relaxation in strained Si1−yCy/Si heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357429
Reference28 articles.
1. Heterojunction bipolar transistors using Si-Ge alloys
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4. Denuded zone formation in carbon‐implanted silicon and its application to device quality silicon‐on‐insulator preparation
5. Reduction of transient boron diffusion in preamorphized Si by carbon implantation
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