Local Arrangement of Substitutional C Atoms and the Thermal Stability of Epitaxial Si:C(P) Grown by CVD-Reference-Cited by-同舟云学术

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Local Arrangement of Substitutional C Atoms and the Thermal Stability of Epitaxial Si:C(P) Grown by CVD

Published:2017 Issue:12 Volume:6 Page:P755-P759
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Dhayalan Sathish Kumar,Nuytten Thomas,Loo Roger,Rosseel Erik,Hikavyy Andriy,Shimura Yosuke,Vandervorst Wilfried

Funder

imec core partners

FWO

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

2. Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond

3. Strain-stabilized highly concentrated pseudomorphicSi1−xCxlayers in Si

4. Phonons as a probe of short-range order inSi1−xCxalloys

5. Local strains in Si1−x−yGexCy alloys as deduced from vibrational frequencies

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers;Journal of Alloys and Compounds;2019-06

2. Deactivation of Phosphorus by Carbon in Recrystallized Silicon;ECS Journal of Solid State Science and Technology;2019

3. Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers;ECS Journal of Solid State Science and Technology;2019

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