Denuded zone formation in carbon‐implanted silicon and its application to device quality silicon‐on‐insulator preparation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108536
Reference7 articles.
1. High-Quality SOI by Bonding of Standard SI Wafers and Thinning by Polishing Techniques Only
2. Silicon‐On‐Insulator by Wafer Bonding: A Review
3. Epi‐less bond‐and‐etch‐back silicon‐on‐insulator by MeV ion implantation
4. Strain compensation by Ge in B‐doped silicon epitaxial films
5. Implanted Carbon: An Effective Etch‐Stop in Silicon
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