Correlation between 1/fnoise and interface state density at the Fermi level in field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335297
Reference9 articles.
1. 1/fnoise in thin oxidep‐channel metal–nitride–oxide–silicon transistors
2. Model for 1/f; noise in MOS transistors biased in the linear region
3. 1/f; noise model for MOSTs biased in nonohmic region
4. Model for 1/f noise in metal‐oxide‐semiconductor transistors
5. A reliable approach to charge-pumping measurements in MOS transistors
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