Model for 1/f noise in metal‐oxide‐semiconductor transistors-Reference-Cited by-同舟云学术

Model for 1/f noise in metal‐oxide‐semiconductor transistors

Published:1981-03 Issue:3 Volume:52 Page:1594-1596
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Kleinpenning T. G. M.¹,Vandamme L. K. J.¹

Affiliation:

1. Eindhoven University of Technology, Department of Electrical Engineering, Eindhoven, Netherlands

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference8 articles.

1. A. van der Ziel, Adv. Electron. Electron Phys. 49, 225 (1979).AEEPAR0065-2539

2. L. K. J. Vandamme, Solid‐State Electron. 23, 317 (1980).SSELA50038-1101

3. L. K. J. Vandamme, in Proceedings of the Second International Symposium on 1/f Noise, Univ. of Florida, Gainesville, March 17–19, 1980, pp. 228–243.

4. T. G. M. Kleinpenning, Physica B (in press).

5. C. Jacoboni and L. Reggiani, Adv. Phys. 28, 493 (1979).ADPHAH0001-8732

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