Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs
Author:
Affiliation:
1. Dipartimento di Ingegneria “Enzo Ferrari” (DIEF), Università degli Studi di Modena e Reggio Emilia, Modena, Italy
2. Dipartimento Politecnico di Ingegneria e Architettura (DPIA), Università degli Studi di Udine, Udine, Italy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9722602/09712620.pdf?arnumber=9712620
Reference33 articles.
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2. FinFET and MOSFET preliminary comparison of gate oxide reliability
3. Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect
4. Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation
5. Low-frequency noise in nanowire and planar III-V MOSFETs
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1. Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis;IEEE Transactions on Electron Devices;2024-03
2. Probing Band Tail States in MOSFETs at Cryogenic Temperatures through Noise Spectroscopy;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17
3. Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures;IEEE Transactions on Electron Devices;2023-04
4. On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise;Solid-State Electronics;2022-08
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