Low-frequency noise in nanowire and planar III-V MOSFETs-Reference-Cited by-同舟云学术

Low-frequency noise in nanowire and planar III-V MOSFETs

Published:2019-07 Issue: Volume:215 Page:110986
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Hellenbrand Markus^ORCID,Kilpi Olli-Pekka,Svensson Johannes,Lind Erik^ORCID,Wernersson Lars-Erik

Funder

Swedish Research Council

European Union Horizon 2020

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. III–V compound semiconductor transistors—from planar to nanowire structures;Riel;MRS Bull.,2014

2. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET;Loubet,2017

3. The era of hyper-scaling in electronics;Salahuddin;Nature Electronics,2018

4. The International Roadmap for Devices and Systems;Balestra,2018

5. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip;Shulaker;Nature,2017

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