Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate-Reference-Cited by-同舟云学术

Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate

Published:2005-12 Issue:11 Volume:98 Page:114506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lukyanchikova N.,Garbar N.,Smolanka A.,Lokshin M.,Simoen E.,Claeys C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2138380

Reference25 articles.

1. Excess Lorentzian Noise in Partially Depleted SOI nMOSFETs Induced by an Accumulation Back-Gate Bias

2. Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs

3. Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs

4. Gate-induced floating body effect excess noise in partially depleted SOI MOSFETs

5. Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal–oxide–semiconductor field-effect transistors

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