Effects of substrate voltage on noise characteristics and hole lifetime in SOI metal-oxide-semiconductor field-effect transistor photon detector-Reference-Cited by-同舟云学术

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Effects of substrate voltage on noise characteristics and hole lifetime in SOI metal-oxide-semiconductor field-effect transistor photon detector

Published:2014-09-04 Issue:18 Volume:22 Page:22072
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Putranto Dedy Septono Catur,Priambodo Purnomo Sidi,Hartanto Djoko,Du Wei,Satoh Hiroaki,Ono Atsushi,Inokawa Hiroshi

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference16 articles.

1. Single-Photon and Photon-Number-Resolving Detectors

2. Photon number resolving detector based on a quantum dot field effect transistor

3. Low-noise photon counting with a radio-frequency quantum-dot field-effect transistor

4. Single Photon Detection with a Quantum Dot Transistor

5. Analysis of photogenerated random telegraph signal in single electron detector (photo-SET)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance one-dimensional MOSFET array photodetectors in the 0.8-µm standard CMOS process;Optics Express;2022-11-14

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