Author:
Yan Gangping,Xu Gaobo,Bi Jinshun,Tian Guoliang,Xu Qiuxia,Yin Huaxiang,Li Yongliang
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference23 articles.
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4. Boscke, T. S, Teichert, St, Brauhaus, D, et al. Phase transitions in ferroelectric silicon doped hafnium oxide. Appl. Phys. Lett., 99(11):112904–0.
5. Tian G L, Bi J S, Xu G B, et al. Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. SCIENCE CHINA Inf. Sci., (accepted).
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