Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal–oxide–semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1604452
Reference14 articles.
1. Parasitic conduction in a 0.13 μm CMOS technology at low temperature
2. Gate-induced floating body effect excess noise in partially depleted SOI MOSFETs
3. Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors
4. The kink-related excess low-frequency noise in silicon-on-insulator MOST's
5. The low-frequency noise behaviour of silicon-on-insulator technologies
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3. Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs;Solid-State Electronics;2015-03
4. Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs;Chinese Physics B;2014-09
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