Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1561575
Reference14 articles.
1. The kink-related excess low-frequency noise in silicon-on-insulator MOST's
2. Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's
3. Physical noise modeling of SOI MOSFETs with analysis of the Lorentzian component in the low-frequency noise spectrum
4. Comprehensive study on low-frequency noise characteristics in surface channel SOI CMOSFETs and device design optimization for RF ICs
5. Kink-Related Excess Noise in Deep Submicron Partially and Moderately Fully Depleted Unibond N-Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation;Radiation Effects and Defects in Solids;2021-12-02
2. Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation;Nanoscale;2018
3. Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide;IEICE Electronics Express;2018
4. Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs;Chinese Physics Letters;2017-11
5. On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs;IEEE Electron Device Letters;2010-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3